Optimized structural properties of wurtzite GaN on SiC(0001) grown by molecular beam epitaxy
نویسنده
چکیده
We have investigated optimal conditions for molecular beam epitaxial growth of high quality GaN on 6H-SiC(0001) substrates. The quality of these films is reflected in both the narrow x-ray peakwidths as well as the excellent surface morphology. In this work, it is shown that increasing growth temperature leads to an improvement in bulk quality and lower xray peakwidth for both symmetric and asymmetric reflections. We also note a marked improvement in surface morphology, from a columnar appearance to a 2-D surface, under extremely Ga-rich growth conditions.
منابع مشابه
Shallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates
A number of wurtzite GaN epilayers directly grown on 4H-SiC ~0001! misoriented by 0, 3.5°, 5°, 8°, and 21° with plasma-assisted molecular-beam epitaxy were optically characterized with photoluminescence and excitation spectra. An intense shallow-defect emission peak locating at energy position ;70 meV lower than the near band edge emission peak at 3.47 eV is found in the emission spectra of the...
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